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| 2SK3234 N MOS FET ADJ-208-696F (Z) 7 2002.01 * * * * * RDS(on) =0.65 typ. IDSS=1A max (at VDS=500V) tf=25ns typ (at VGS=10V, VDD=250V, ID=4A) (Qg) Qg=25nC typ (VDD=400V, VGS=10V, ID=8A) TO-220CFM D G 12 3 1. 2. 3. S 2SK3234 (Ta=25 * * VDSS VGSS ID ID (pulse) IDR IDR (pulse) IAP 3 Pch 2 ch-c Tch Tstg 10s, duty cycle 1% 150 500 30 8 32 8 32 8 35 3.57 150 -55 +150 V V A A A A A W /W ) 1 1 1. PW 3. Tch 2. Tc = 25 (Ta=25 * V(BR)DSS IDSS IGSS VGS(off) |yfs| RDS(on) Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VDF trr Qrr Min 500 -- -- 3.0 4.0 -- -- -- -- -- -- -- -- -- -- -- -- -- -- Typ Max -- 1 0.1 4.0 -- 0.85 V A A V S pF pF pF ns ns ns ns nC nC nC V ns C ID = 10mA, VGS = 0 VDS = 500V, VGS = 0 VGS = 30V, VDS = 0 VDS = 10V, ID = 1mA ID = 4A, VDS = 10V 4 ID = 4A, VGS= 10V 4 VDS = 25V VGS = 0 f = 1MHz VDD = 250V, ID= 4A VGS = 10V RL = 62.5 Rg=10 VDD = 400V VGS = 10V ID = 8A IF = 8A, VGS = 0 IF = 8A, VGS = 0 diF/dt=100A/s ) * * * * 7.0 0.65 970 110 18 25 21 80 25 25 4 11 0.9 360 1.7 -- -- -- -- -- 1.35 -- -- 4. 2 2SK3234 40 Pch (W) I D (A) 100 30 10 3 DC 10 s PW Op 30 10 = 10 1m m s (1 0 s s ot ) 20 1 0.3 er at ion sh (T ) c= 25 10 0.1 R DS(on) 0.03 0.01 Ta = 25C 1 3 10 30 C 0 50 100 150 Tc (C) 200 100 300 1000 V DS (V) 10 10 V 6V 5.5 V I D (A) 10 V DS = 10 V 8 Tc = 75C I D (A) 8 6 5V 6 4 4 25C 4.5 V VGS = 4V 2 -25C 2 4 6 8 VGS (V) 10 2 0 10 20 30 40 50 V DS (V) 0 3 2SK3234 V DS(on) (V) R DS(on) () 20 5 VGS = 10 V, 15 V 2 1 0.5 16 12 8 ID=8A 4 5A 2A 0 2 4 6 8 V GS (V) 10 0.2 0.1 0.1 0.2 0.5 1 2 5 10 20 I D (A) 50 RDS(on) () 5 50 |yfs| (S) 4 V GS = 10 V 20 10 5 2 Tc = -25C 3 ID=8A 75C 25C 2 1 0.5 1 2A 0 -40 0 40 80 Tc 5A 0.2 160 0.1 0.1 0.2 0.5 1 2 5 V DS = 10 V 10 20 50 120 (C) I D (A) 4 2SK3234 1000 500 5000 2000 1000 VGS = 0 f = 1 MHz Ciss trr (ns) C (pF) 200 100 50 500 200 100 50 Coss 20 10 0.1 di / dt = 100 A / s V GS = 0, Ta = 25C 0.3 1 3 10 30 I DR (A) 100 20 10 5 Crss 0 50 100 150 200 250 V DS (V) 1000 V DS (V) V GS (V) I D= 8 A 20 VGS 16 1000 800 t (ns) 500 V GS = 10 V, V DD = 250 V PW = 10 s, duty < 1 % R G =10 200 600 VDS 12 V DD = 100 V 250 V 400 V 8 100 50 t d(on) 20 tr 30 40 0 50 10 0.1 0.3 1 3 10 30 I D (A) 100 t d(off) tf 400 200 V DD = 400 V 250 V 100 V 10 20 4 0 Qg (nC) 5 2SK3234 VGS(off) (V) 10 I DR (A) 5 V DS = 10 V I D = 10mA 1mA 8 5, 10 V 6 V GS = 0 V 4 3 0.1mA 2 4 2 1 0 -50 0 0.4 0.8 1.2 1.6 V SD (V) 2.0 0 50 100 150 200 Tc (C) Vin Monitor D.U.T. RL 10 Vin 10 V Vout Monitor 90% Vin 10% 10% 90% td(on) tr 90% td(off) tf 10% V DD = 250 V Vout 6 2SK3234 3 Tc = 25C 1 D=1 0.5 0.3 s (t) 0.2 0.1 0.1 0.05 0.03 0.02 0.01 0.01 ch - c(t) = s (t) * ch - c ch - c = 3.57C/W, Tc = 25C 0.003 1s ho u tp lse PDM PW T D= PW T 0.001 10 100 1m 10 m PW (S) 100 m 1 10 7 2SK3234 As of July, 2001 Unit: mm 10.0 0.3 3.2 0.2 4.5 0.3 2.7 0.2 4.1 0.3 0.6 0.1 2.5 0.2 2.54 2.54 0.7 0.1 Hitachi Code JEDEC JEITA Mass (reference value) 13.60 1.0 1.0 0.2 1.15 0.2 12.0 0.3 15.0 0.3 TO-220CFM -- -- 1.9 g 8 2SK3234 1. 2. 3. 4. 5. 6. 7. 8. 100-0004 (011) 261-3131 ( (022) 223-0121 ( (03) 3212-1111 ( (025) 241-8161 ( (029) 271-9411 ( (0263) 36-6632 (045) 451-5000 ( (0462) 96-6800 ( ) ) ) ) ) ) ) 62 ( ) (0559) 51-3530 ( (076)263-2351 ( (052) 243-3111 ( (06) 6616-1111 ( (082) 223-4111 ( (087) 831-2111 ( (089) 943-1333 ( (092) 852-1111 ( ) ) ) ) ) ) ) ) E-Mail:csc@sic.hitachi.co.jp E-Mail:document@sic.hitachi.co.jp (03) 5201-5220( ) (03) 5201-5189( ) Copyright (c) Hitachi, Ltd., 2002. All rights reserved. Printed in Japan. () http://www.hitachisemiconductor.com/jp/ Colophon 4.0 9 |
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